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IRF7701GPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-12
––– ––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
-0.006 –––
V/°C
Reference to 25°C, I D = -1mA
?
––– -25 V DS = -9.6V, V GS = 0V, T J = 70°C
––– 100 V GS = 8.0V
19 ––– V DD = -6.0V
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
???
???
-0.45
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.011 V GS = -4.5V, I D = -10A ?
––– 0.015 V GS = -2.5V, I D = -8.5A ?
––– 0.022 V GS = -1.8V, I D = -7.0A ?
––– -1.2 V V DS = V GS , I D = -250μA
––– ––– S V DS = -10V, I D = -10A
––– 1.0 V DS = -12V, V GS = 0V
μA
––– -100 V GS = -8.0V
nA
69 100 I D = -8.0A
9.1 14 nC V DS = -9.6V
21 32 V GS = -4.5V ?
ns
20 ––– I D = -1.0A
240 ––– R D = 6.0 ?
220 ––– V GS = -4.5V ?
5050 ––– V GS = 0V
1520 ––– pF V DS = -10V
1120 ––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
???
???
???
???
-1.5
-80
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
52
53
-1.2
78
80
V
ns
nC
T J = 25°C, I S = -1.5A, V GS = 0V ?
T J = 25°C, I F = -1.5A
di/dt = 100A/μs ?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
? When mounted on 1 inch square copper board, t<10 sec
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